Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix

The electrical and electroluminescence properties of a single narrow-gap heterostructure based on a $p$–$n$ junction in indium arsenide, containing a single layer of InSb quantum dots in the InAs matrix, are studied. The presence of quantum dots has a significant effect on the shape of the reverse branch of the current-voltage characteristic of the heterostructure. Under reverse bias, the room-temperature electroluminescence spectra of the heterostructure with quantum dots, in addition to a negative-luminescence band with a maximum at the wavelength $\lambda$ = 3.5 $\mu$m, contained a positive-luminescence emission band at 3.8 $\mu$m, caused by radiative transitions involving localized states of quantum dots at the type-II InSb/InAs heterointerface.