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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 1, Pages 32–37 (Mi phts8118)  
Electronic properties of semiconductors

Radiative recombination of hot carriers in narrow-gap semiconductors

N. V. Pavlov, G. G. Zegrya

Ioffe Institute, St. Petersburg
Full-text PDF (194 kB)
Abstract: The mechanism of the radiative recombination of hot carriers in narrow-gap semiconductors is analyzed using the example of indium antimonide. It is shown that the CHCC Auger recombination process may lead to pronounced carrier heating at high excitation levels. The distribution functions and concentrations of hot carriers are determined. The radiative recombination rate of hot carriers and the radiation gain coefficient are calculated in terms of the Kane model. It is demonstrated that the radiative recombination of hot carriers will make a substantial contribution to the total radiative recombination rate at high carrier concentrations.
Received: 15.06.2011
Accepted: 17.06.2011
English version:
Semiconductors, 2012, Volume 46, Issue 1, Pages 29–34
DOI: https://doi.org/10.1134/S1063782612010162
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. V. Pavlov, G. G. Zegrya, “Radiative recombination of hot carriers in narrow-gap semiconductors”, Fizika i Tekhnika Poluprovodnikov, 46:1 (2012), 32–37; Semiconductors, 46:1 (2012), 29–34
Citation in format AMSBIB
\Bibitem{PavZeg12}
\by N.~V.~Pavlov, G.~G.~Zegrya
\paper Radiative recombination of hot carriers in narrow-gap semiconductors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2012
\vol 46
\issue 1
\pages 32--37
\mathnet{http://mi.mathnet.ru/phts8118}
\elib{https://elibrary.ru/item.asp?id=20319049}
\transl
\jour Semiconductors
\yr 2012
\vol 46
\issue 1
\pages 29--34
\crossref{https://doi.org/10.1134/S1063782612010162}
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