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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 5, Pages 609–612
(Mi phts8227)
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This article is cited in 4 scientific papers (total in 4 papers)
Non-electronic properties of semiconductors (atomic structure, diffusion)
Phase transitions in thin Ge$_2$Sb$_2$Te$_5$ chalcogenide films according to Raman spectroscopy data
A. P. Avacheva, S. P. Vikhrova, N. V. Vishnyakova, S. A. Kozyukhinb, K. V. Mitrofanova, E. I. Terukovc a Ryazan State Radio Engineering University
b Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow
c Ioffe Institute, St. Petersburg
Abstract:
Data on the Raman spectra of thin Ge$_2$Sb$_2$Te$_5$ chalcogenide semiconductor films are reported. The study is performed with the purpose of determining the temperatures of phase transitions initiated by laser radiation.
Received: 18.10.2011 Accepted: 31.10.2011
Citation:
A. P. Avachev, S. P. Vikhrov, N. V. Vishnyakov, S. A. Kozyukhin, K. V. Mitrofanov, E. I. Terukov, “Phase transitions in thin Ge$_2$Sb$_2$Te$_5$ chalcogenide films according to Raman spectroscopy data”, Fizika i Tekhnika Poluprovodnikov, 46:5 (2012), 609–612; Semiconductors, 46:5 (2012), 591–594
Linking options:
https://www.mathnet.ru/eng/phts8227 https://www.mathnet.ru/eng/phts/v46/i5/p609
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