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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 6, Pages 815–819 (Mi phts8266)  
This article is cited in 8 scientific papers (total in 8 papers)

Carbon systems

Electroluminescence of GaP$_x$N$_y$As$_{1-x-y}$ nanoheterostructures through a transparent electrode made of CVD graphene

A. V. Babichevab, V. Yu. Butkoab, M. S. Soboleva, E. V. Nikitinaa, N. V. Kryzhanovskayaab, A. Yu. Egorovab

a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
b Ioffe Institute, St. Petersburg
Full-text PDF (1010 kB) Citations (8)
Abstract: The results of experimental studies aimed at the development of GaP$_x$N$_y$As$_{1-x-y}$ alloy nanoheterostructures with a new type of transparent electrode based on CVD graphene are reported. The electroluminescence properties of the structures are studied. High stability of the emission wavelength (2–3 nm) in conditions of increasing temperature (from 12$^\circ$C to 60$^\circ$C) and increasing injection current (from 0 A to 1 A) is demonstrated.
Received: 06.12.2011
Accepted: 19.12.2011
English version:
Semiconductors, 2012, Volume 46, Issue 6, Pages 796–800
DOI: https://doi.org/10.1134/S106378261206005X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Babichev, V. Yu. Butko, M. S. Sobolev, E. V. Nikitina, N. V. Kryzhanovskaya, A. Yu. Egorov, “Electroluminescence of GaP$_x$N$_y$As$_{1-x-y}$ nanoheterostructures through a transparent electrode made of CVD graphene”, Fizika i Tekhnika Poluprovodnikov, 46:6 (2012), 815–819; Semiconductors, 46:6 (2012), 796–800
Citation in format AMSBIB
\Bibitem{BabButSob12}
\by A.~V.~Babichev, V.~Yu.~Butko, M.~S.~Sobolev, E.~V.~Nikitina, N.~V.~Kryzhanovskaya, A.~Yu.~Egorov
\paper Electroluminescence of GaP$_x$N$_y$As$_{1-x-y}$ nanoheterostructures through a transparent electrode made of CVD graphene
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2012
\vol 46
\issue 6
\pages 815--819
\mathnet{http://mi.mathnet.ru/phts8266}
\elib{https://elibrary.ru/item.asp?id=20319188}
\transl
\jour Semiconductors
\yr 2012
\vol 46
\issue 6
\pages 796--800
\crossref{https://doi.org/10.1134/S106378261206005X}
Linking options:
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  • https://www.mathnet.ru/eng/phts/v46/i6/p815
    • This publication is cited in the following 8 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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