Systematic features of the variation in the crystal-chemical, electrical, and surface physicochemical properties of A$^X$B$^{8-X}$ materials on the energy of the inverse adsorption piezoelectric effect

Based on the generalization of experimental data on the structure, properties, adsorption and electrical properties of diamond-like semiconductors, the systematic features of variation in their crystalchemical, electrical, and surface (adsorption and electrical) properties depending on the energy of the reverse adsorption piezoelectric effect is established for the first time. It is noted that this energy coincides with the energy of formation and annihilation of point defects in solids, which is determined by the dilatometric and calorimetric methods. Empirical formulas for variation in the band gap, melting point, and microhardness depending on the energy density in oxygen are found for II–VI compounds. Based on the found systematic feature, the values of the microhardness for the semiconductor materials HgS, HgSe, and Cd$_{0.12}$Hg$_{0.88}$Te, which are lacking in published data, are found.