Growth of 4H silicon carbide crystals on a $(11\bar22)$ seed

The features of the defect structure of 4H silicon carbide ingots grown by the modified Lely method on $(11\bar22)$-oriented seeds are studied. It is shown that this seed plane can be used to improve the structural quality of silicon carbide ingots. The defect structure of grown ingots features a complete lack of micropores and a decreased (by an order of magnitude) dislocation density in comparison with the seed. At the same time, growth on the $(11\bar22)$ seed results in stacking fault accumulation. The type of stacking faults corresponds to formula (5, 2) in the Zhdanov notation (internal Frank stacking fault).