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Pisma v Zhurnal Tekhnicheskoi Fiziki, 1991, Volume 17, Issue 17, Pages 25–28 (Mi pjtf3962)  
ELECTRONIC MOBILITY OF GALLIUM-ARSENIDE LAYERS PREPARED THROUGH MOLECULAR-BEAM EPITAXY IN HYDROGEN ATMOSPHERE

B. K. Medvedev, V. G. Mokerov
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Document Type: Article
Language: Russian
Citation: B. K. Medvedev, V. G. Mokerov, “ELECTRONIC MOBILITY OF GALLIUM-ARSENIDE LAYERS PREPARED THROUGH MOLECULAR-BEAM EPITAXY IN HYDROGEN ATMOSPHERE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:17 (1991), 25–28
Citation in format AMSBIB
\Bibitem{Mok91}
\by B.~K.~Medvedev, V.~G.~Mokerov
\paper ELECTRONIC MOBILITY OF GALLIUM-ARSENIDE LAYERS PREPARED THROUGH
MOLECULAR-BEAM EPITAXY IN HYDROGEN ATMOSPHERE
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 1991
\vol 17
\issue 17
\pages 25--28
\mathnet{http://mi.mathnet.ru/pjtf3962}
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