The effect of As$^+$ ion implantation and annealing on the electrical properties of near-surface layers in graded-gap $n$-Hg$_{0.78}$Cd$_{0.22}$Te films

Films of $n$-Hg$_{0.78}$Cd$_{0.22}$Te with near-surface wide-gap layers were grown by molecular beam epitaxy on Si (013) substrates. To measure the admittance, metal – insulator – semiconductor (MIS) structures were fabricated on the basis of the as-grown HgCdTe film, films after implantation, and films after implantation and annealing. Using techniques that take into account the presence of graded-gap layers and slow interface states, the main parameters of the near-surface layers of HgCdTe films have been determined after the technological procedures used to create photodiodes.