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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 1, Pages 15–19
DOI: https://doi.org/10.21883/PJTF.2021.01.50451.18494 (Mi pjtf4893) 		 
The effect of stepwise postimplantation annealing on the composition and structure of silicon surface layers implanted with alkali metal ions

B. E. Umirzakova, Z. A. Isakhanovb, G. Kh. Allayarovaa, R. M. Yorkulovb

a Tashkent State Technical University
b Institute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent
Full-text PDF (973 kB)
DOI: https://doi.org/10.21883/PJTF.2021.01.50451.18494
Abstract: The dynamics of changes in the crystal structure and in the elemental and chemical composition of Si surface layers implanted with Na$^+$, Rb$^+$, and Cs$^+$ ions in the process of stepwise annealing under different temperature conditions has been studied. It is shown that, on the surface implanted with Na$^+$ ions, a NaSi$_2$ film is formed after annealing it at a temperature of $T$ = 900 K, a single-layer NaSi$_2$ coating is formed at $T$ = 1000 K and the surface and near-surface Si layers are completely cleansed of the atoms of the alloying element, oxygen, and carbon at $T$ = 1100 K.
Keywords: ion implantation, metal silicide, epitaxial layers, nanofilms, annealing, diffraction of fast electrons, monolayer coatings, dose of ions.
Received: 03.08.2020
Revised: 17.09.2020
Accepted: 17.09.2020
English version:
Technical Physics Letters, 2021, Volume 47, Issue 1, Pages 11–15
DOI: https://doi.org/10.1134/S1063785021010120
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. E. Umirzakov, Z. A. Isakhanov, G. Kh. Allayarova, R. M. Yorkulov, “The effect of stepwise postimplantation annealing on the composition and structure of silicon surface layers implanted with alkali metal ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:1 (2021), 15–19; Tech. Phys. Lett., 47:1 (2021), 11–15
Citation in format AMSBIB
\Bibitem{UmiIsaAll21}
\by B.~E.~Umirzakov, Z.~A.~Isakhanov, G.~Kh.~Allayarova, R.~M.~Yorkulov
\paper The effect of stepwise postimplantation annealing on the composition and structure of silicon surface layers implanted with alkali metal ions
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 1
\pages 15--19
\mathnet{http://mi.mathnet.ru/pjtf4893}
\crossref{https://doi.org/10.21883/PJTF.2021.01.50451.18494}
\elib{https://elibrary.ru/item.asp?id=44860428}
\transl
\jour Tech. Phys. Lett.
\yr 2021
\vol 47
\issue 1
\pages 11--15
\crossref{https://doi.org/10.1134/S1063785021010120}
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