Electric field-stimulated photoconductivity in silicon with manganese atom nanoclusters in the range of 3–8 $\mu$m

It is shown that the photoresponse threshold and photosensitivity in a photoresistor material based on silicon doped with manganese atoms with the formation of the Mn$_4$B nanoclusters can be changed by varying the electric field in the range of 0.1–30 V/cm. It has been found that, by changing the electric field, one can shift the photoresponse threshold of the samples at $T$ = 100 K from 4.6 to 8 $\mu$m. The monochromatic photosensitivity at $h\nu$ = 0.4 eV increases by 2.5 orders of magnitude as the field changes from 1 to 3 V/cm.