Peculiarities of the current–voltage characteristic of $n$-GaP–$p$-(InSb)$_{1-x}$(Sn$_{2}$)$_{x}$ heterostructures

The current-voltage characteristic of $n$-GaP–$p$-(InSb)$_{1-x}$(Sn$_{2}$)$_{x}$ heterostructures has been studied. It has been shown that at low voltages $V<0.5$ V, the current-voltage characteristic is described by the exponential law: $I=I_{0}\exp(qV/ckT)$, and at large ones from 0.5 to 1.8 V power laws: $I=AV^{m}$ with different values of the coefficient A and exponent m at various voltages. At higher voltages – from 2.10 to 2.48 V, a sublinear part is observed, which is described by the law: $V=V_{0}\exp (Jd/2kT\mu_{p}N_{t})$.