Study of the density of interface states at the insulator/In$_{0.52}$Al$_{0.48}$As interface

The $C$–$V$ characteristics of Au/Al$_{2}$O$_{3}$/In$_{0.52}$Al$_{0.48}$As и Au/SiO$_{2}$/In$_{0.52}$Al$_{0.48}$As metal–insulator–semiconductor structures have been studied. It has been established that the fragmentary measurement of the $C$–$V$ characteristics of InAlAs-based metal–insulator–semiconductor structures, in contrast standard registration method to at a constant voltage sweep rate, significantly weakens the effect of the hysteresis phenomena and allows one to record stationary curves. It is shown that the density of fast interface states calculated by the Terman method from such C–V characteristics slightly changes over the InAlAs band gap and amounts to (3–6) $\cdot$ 10$^{11}$ и (1–3) $\cdot$ 10$^{11}$ eV$^{-1}$ $\cdot$ cm$^{-2}$ for MIS structures with Al$_2$O$_3$ and SiO$_2$, respectively.