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This article is cited in 2 scientific papers (total in 2 papers)
Features of switching memristor structures to a high-resistance state by sawtooth pulses
D. O. Filatov, V. V. Karzanov, I. N. Antonov, O. N. Gorshkov Lobachevsky State University of Nizhny Novgorod
Abstract:
It has been experimentally established that the time of switching by triangular pulses in Ti–TiN–ZrO$_2$(Y)–Zr–Au memristor structures from the state of low resistance to the state of high resistance is inversely proportional to the voltage rise rate, i.e., the bias current through the memristor structure. A mechanism for the influence of a bias current on the switching time of the structure has been proposed.
Received: 20.09.2018
Citation:
D. O. Filatov, V. V. Karzanov, I. N. Antonov, O. N. Gorshkov, “Features of switching memristor structures to a high-resistance state by sawtooth pulses”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 88–93; Tech. Phys. Lett., 44:12 (2018), 1160–1162
Linking options:
https://www.mathnet.ru/eng/pjtf5601 https://www.mathnet.ru/eng/pjtf/v44/i24/p88
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