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This article is cited in 5 scientific papers (total in 5 papers)
A study of the crystal structure of Co$_{40}$Fe$_{40}$B$_{20}$ epitaxial films on a Bi$_{2}$Te$_{3}$ topological insulator
A. K. Kaveeva, S. M. Suturina, N. S. Sokolova, K. A. Kokhbc, O. E. Tereshchenkocd a Ioffe Institute, St. Petersburg
b Sobolev Institute of Geology and Mineralogy, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
c Novosibirsk State University
d Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
Laser molecular-beam epitaxy has been used to form Co$_{40}$Fe$_{40}$B$_{20}$ layers on Bi$_{2}$Te$_{3}$ topological insulator substrates, and their growth conditions have been studied. The possibility of growing epitaxial ferromagnetic layers on the surface of a topological insulator is demonstrated for the first time. The CoFeB layers have a body-centered cubic crystal structure with the (111) crystal plane parallel to the (0001) plane of Bi$_{2}$Te$_{3}$. 3D mapping in the reciprocal space of high-energy electron-diffraction patterns made it possible to determine the epitaxial relationships between the film and the substrate.
Received: 14.09.2017
Citation:
A. K. Kaveev, S. M. Suturin, N. S. Sokolov, K. A. Kokh, O. E. Tereshchenko, “A study of the crystal structure of Co$_{40}$Fe$_{40}$B$_{20}$ epitaxial films on a Bi$_{2}$Te$_{3}$ topological insulator”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:5 (2018), 10–15; Tech. Phys. Lett., 44:3 (2018), 184–186
Linking options:
https://www.mathnet.ru/eng/pjtf5864 https://www.mathnet.ru/eng/pjtf/v44/i5/p10
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