Creation and electrical properties of $p$-Cu$_{2}$ZnSnS$_{4}$/$n$-Si heterojunctions

Anisotype $p$-Cu$_{2}$ZnSnS$_{4}$/$n$-Si heterojunctions have been manufactured for the first type by sulfidation of base-metal layers predeposited onto polycrystalline silicon substrates. Current–voltage characteristics of the heterojunctions are analyzed, and the mechanisms of current transfer are discussed. It is established that forward-biased structures are characterized by both tunneling-recombination processes and space-charge limited mobility of carriers. In reversely biased heterojunctions, space-charge limited currents predominate.