The influence of the surface neutralization of active impurities on the field-electron emission properties of $p$-type silicon crystals

Correlation dependences between variations of the structural-phase composition, morphology characteristics, and field-electron-emission (FEE) properties of surface-structured $p$-type silicon singlecrystalline (100)-oriented wafers have been studied during their stepwise high-dose carbon-ion-beam irradiation. It is established that the stepwise implantation of carbon decreases the FEE threshold and favors an increase in the maximum FEE-current density by more than two orders of magnitude. Physicochemical mechanisms involved in this modification of the properties of near-surface layers of silicon under carbon-ion implantation are considered.