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This article is cited in 3 scientific papers (total in 3 papers)
Comparison of flash-memory elements using materials based on graphene
I. V. Antonovaabc, I. A. Kotina, O. M. Orlovd, S. F. Devyatovaa a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Novosibirsk State Technical University
d Molecular Electronics Research Institute, Moscow, Russia
Abstract:
Charge capture on flash-memory test structures with floating gates made of graphene (few-layer graphene) and its compounds (graphene oxide and partially fluorinated graphene) is investigated. A comparison of the memory window for different structures has shown the potential of using reduced graphene oxide, graphene with only a few layers, and fluorographene. For the first time, partially fluorinated graphene has been employed as a floating gate in flash-memory structures. Graphene-based materials are promising for 2D printing technologies and flexible electronics.
Received: 27.12.2016
Citation:
I. V. Antonova, I. A. Kotin, O. M. Orlov, S. F. Devyatova, “Comparison of flash-memory elements using materials based on graphene”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017), 43–50; Tech. Phys. Lett., 43:10 (2017), 889–892
Linking options:
https://www.mathnet.ru/eng/pjtf6107 https://www.mathnet.ru/eng/pjtf/v43/i19/p43
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