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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 43, Issue 19, Pages 43–50
DOI: https://doi.org/10.21883/PJTF.2017.19.45080.16623
(Mi pjtf6107)
 

This article is cited in 3 scientific papers (total in 3 papers)

Comparison of flash-memory elements using materials based on graphene

I. V. Antonovaabc, I. A. Kotina, O. M. Orlovd, S. F. Devyatovaa

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Novosibirsk State Technical University
d Molecular Electronics Research Institute, Moscow, Russia
Abstract: Charge capture on flash-memory test structures with floating gates made of graphene (few-layer graphene) and its compounds (graphene oxide and partially fluorinated graphene) is investigated. A comparison of the memory window for different structures has shown the potential of using reduced graphene oxide, graphene with only a few layers, and fluorographene. For the first time, partially fluorinated graphene has been employed as a floating gate in flash-memory structures. Graphene-based materials are promising for 2D printing technologies and flexible electronics.
Received: 27.12.2016
English version:
Technical Physics Letters, 2017, Volume 43, Issue 10, Pages 889–892
DOI: https://doi.org/10.1134/S1063785017100029
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. V. Antonova, I. A. Kotin, O. M. Orlov, S. F. Devyatova, “Comparison of flash-memory elements using materials based on graphene”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017), 43–50; Tech. Phys. Lett., 43:10 (2017), 889–892
Citation in format AMSBIB
\Bibitem{AntKotOrl17}
\by I.~V.~Antonova, I.~A.~Kotin, O.~M.~Orlov, S.~F.~Devyatova
\paper Comparison of flash-memory elements using materials based on graphene
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2017
\vol 43
\issue 19
\pages 43--50
\mathnet{http://mi.mathnet.ru/pjtf6107}
\crossref{https://doi.org/10.21883/PJTF.2017.19.45080.16623}
\elib{https://elibrary.ru/item.asp?id=30054525}
\transl
\jour Tech. Phys. Lett.
\yr 2017
\vol 43
\issue 10
\pages 889--892
\crossref{https://doi.org/10.1134/S1063785017100029}
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  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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