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This article is cited in 1 scientific paper (total in 1 paper)
A two-dimensional electron gas in donor–acceptor doped backward heterostructures
A. B. Pashkovskii, S. I. Novikov, V. G. Lapin, V. M. Lukashin Research and Production Corporation "Istok" named after Shokin, Fryazino, Moskovskaya obl.
Abstract:
We propose a backward-diode heterostructure modified by a built-in acceptor-doped layer that forms an additional potential barrier decreasing the transverse transport of hot electrons to the substrate. According to calculations, this structure is characterized by (i) an energy difference between dimensional quantization levels that is several times the optical phonon energy in GaAs and (ii) increased linearity of transfer characteristics.
Received: 26.01.2017
Citation:
A. B. Pashkovskii, S. I. Novikov, V. G. Lapin, V. M. Lukashin, “A two-dimensional electron gas in donor–acceptor doped backward heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:12 (2017), 42–51; Tech. Phys. Lett., 43:6 (2017), 562–566
Linking options:
https://www.mathnet.ru/eng/pjtf6197 https://www.mathnet.ru/eng/pjtf/v43/i12/p42
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