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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 10, Pages 85–91 (Mi pjtf6420)  
This article is cited in 5 scientific papers (total in 5 papers)

Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source

V. V. Lundin, E. E. Zavarin, P. N. Brunkov, M. A. Yagovkina, A. V. Sakharov, M. A. Sinicin, B. Ya. Ber, D. Yu. Kazantsev, A. F. Tsatsul'nikov

Ioffe Institute, St. Petersburg
Full-text PDF (302 kB) Citations (5)
URL: https://journals.ioffe.ru/pjtf/2016/10/page-85.html.ru
Abstract: The influence of propane present in a reactor at various stages of GaN growth by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates on the character of epitaxial process and the properties of epilayers has been studied. Doped GaN epilayers with carbon concentration 5 $\times$ 10$^{18}$ cm$^{-3}$ characterized by high crystalline perfection, an atomically smooth surface, and electric breakdown voltage above 500 V at a doped layer thickness of 4 $\mu$m have been obtained.
Received: 01.12.2015
English version:
Technical Physics Letters, 2016, Volume 42, Issue 5, Pages 539–542
DOI: https://doi.org/10.1134/S106378501605028X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Lundin, E. E. Zavarin, P. N. Brunkov, M. A. Yagovkina, A. V. Sakharov, M. A. Sinicin, B. Ya. Ber, D. Yu. Kazantsev, A. F. Tsatsul'nikov, “Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016), 85–91; Tech. Phys. Lett., 42:5 (2016), 539–542
Citation in format AMSBIB
\Bibitem{LunZavBru16}
\by V.~V.~Lundin, E.~E.~Zavarin, P.~N.~Brunkov, M.~A.~Yagovkina, A.~V.~Sakharov, M.~A.~Sinicin, B.~Ya.~Ber, D.~Yu.~Kazantsev, A.~F.~Tsatsul'nikov
\paper Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2016
\vol 42
\issue 10
\pages 85--91
\mathnet{http://mi.mathnet.ru/pjtf6420}
\elib{https://elibrary.ru/item.asp?id=27368211}
\transl
\jour Tech. Phys. Lett.
\yr 2016
\vol 42
\issue 5
\pages 539--542
\crossref{https://doi.org/10.1134/S106378501605028X}
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  • https://www.mathnet.ru/eng/pjtf/v42/i10/p85
    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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