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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 6, Pages 6–13
(Mi pjtf6467)
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This article is cited in 1 scientific paper (total in 1 paper)
The role of crystallographic anisotropy in formation of the structure of silicon-implanted layers of NiTi single crystals
T. M. Poletikaa, L. L. Meysnerab, S. L. Girsovaa, A. V. Tverdokhlebovaa, S. N. Meisnerab a Institute of Strength Physics and Materials Science, Siberian Branch of the Russian Academy of Sciences, Tomsk, Russia
b Tomsk State University
Abstract:
The Auger electron spectroscopy and transmission electron microscopy techniques have been used to study the composition and structure of the surface layers of NiTi single crystals implanted with silicon ions at various directions of the incident ion beam. The role of “soft” [111]$_{\mathrm{B2}}$ and “hard” [001]$_{\mathrm{B2}}$ orientations of the NiTi single crystal in formation of the ion-beam-modified surface layer and the defect structure of Siion-implanted near-surface layers is revealed.
Keywords:
Technical Physic Letter, Auger Electron Spectroscopy, NiTi Alloy, Transmission Electron Microscopy Technique, Crystallographic Anisotropy.
Received: 01.10.2015
Citation:
T. M. Poletika, L. L. Meysner, S. L. Girsova, A. V. Tverdokhlebova, S. N. Meisner, “The role of crystallographic anisotropy in formation of the structure of silicon-implanted layers of NiTi single crystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:6 (2016), 6–13; Tech. Phys. Lett., 42:3 (2016), 280–283
Linking options:
https://www.mathnet.ru/eng/pjtf6467 https://www.mathnet.ru/eng/pjtf/v42/i6/p6
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