Investigation of the influence of heat treatment and electrical power on the main characteristics of thin-film thermistors with a layer structure

A layer version of the thermistor was created using the magnetron sputtering method, when the working layer of a spinel phase semiconductor film is applied to a metal film previously formed on a polycor substrate, forming an internal electrode. The influence of heat treatment and electrical power on the main characteristics of the obtained thermistors was studied. It has been established that the transition to a layer structure makes it possible to obtain chip thermistors with a resistance of less than 100 $\Omega$ while maintaining high temperature nonlinearity of the resistance. After temperature treatment at 400–500$^\circ$C, thermistors acquire two to three orders of magnitude greater resistance and pronounced field nonlinearity, which determines the strong dependence of the resistance on the applied voltage. Samples of thermistors with an internal electrode made of Ni, and especially NiCr, after annealing at 500$^\circ$C, exhibit high resistance to extreme electrical power of several watts.