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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2024, Volume 50, Issue 6, Pages 23–27 DOI: https://doi.org/10.61011/PJTF.2024.06.57302.19821
(Mi pjtf6632)
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Half-disk microlasers with half-ring contact based on InGaAs/GaAs quantum well-dots with high output power
F. I. Zubova, Yu. M. Shernyakovb, A. A. Bekmanb, È. I. Moiseeva, Yu. A. Salii (Guseva)ab, M. M. Kulaginab, N. A. Kalyuzhnyyb, S. A. Mintairovb, M. V. Maksimova a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
b Ioffe Institute, St. Petersburg, Russia
DOI:
https://doi.org/10.61011/PJTF.2024.06.57302.19821
Abstract:
Light-current characteristics of half-disk microlasers with active region based on InGaAs/GaAs quantum well-dots emitting at wavelength of 1090 nm are studied. The devices were fabricated by cleaving 200 $\mu$m in diameter microdisks with 10 $\mu$m wide ring contacts. The maximal achieved CW output optical power amounted to 110 mW. Lasing was observed up to 113$^\circ$C.
Keywords:
microlaser, half-disk resonator, whispering gallery modes, quantum well-dots.
Received: 29.11.2023 Revised: 06.12.2023 Accepted: 06.12.2023
Citation:
F. I. Zubov, Yu. M. Shernyakov, A. A. Bekman, È. I. Moiseev, Yu. A. Salii (Guseva), M. M. Kulagina, N. A. Kalyuzhnyy, S. A. Mintairov, M. V. Maksimov, “Half-disk microlasers with half-ring contact based on InGaAs/GaAs quantum well-dots with high output power”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:6 (2024), 23–27
Linking options:
https://www.mathnet.ru/eng/pjtf6632 https://www.mathnet.ru/eng/pjtf/v50/i6/p23
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| Statistics & downloads: |
| Abstract page: | 69 | | Full-text PDF : | 38 |
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