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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2023, Volume 49, Issue 2, Pages 14–16
DOI: https://doi.org/10.21883/PJTF.2023.02.54279.19395 (Mi pjtf6893) 		 
Active coplanar transmission line based on double-barrier GaAs/AlAs resonant tunneling diodes

A. S. Sobolevab, A. Yu. Pavlovc, M. V. Maytamacd, I. A. Glinskiye, D. S. Ponomarevcb, K. E. Spirinf, B. A. Zhmudb, R. A. Khabibullinbc

a Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Moscow, Russia
b Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region
c V. G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow, Russia
d Bauman Moscow State Technical University, Moscow, Russia
e MIREA — Russian Technological University, Moscow, Russia
f P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow, Russia
Full-text PDF (276 kB)
DOI: https://doi.org/10.21883/PJTF.2023.02.54279.19395
Abstract: Double-barrier GaAs/AlAs resonant tunneling diodes (RTDs) have become the promising elements for the development of sub-mm and THz emitters. We report on the fabrication of the RTD samples that were characterized via RF-reflectometry to determine the parameters of its equivalent circuit. By using numerical simulation we show that the coplanar transmission line with the RTD under study provides an amplification up to 8 GHz.
Keywords: resonant tunneling diodes, active microstrip transmission lines, distributed emitters, diodes with double metal contacts.
Funding agency Grant number
Russian Science Foundation 22-22-00767
19-79-10240
Program of Strategic Academic Leadership Prioritet-2030 075-02-2021-1316
The work on RTDs (their fabrication and measurement of microwave characteristics) and GaAs/AlAs heterostructure growth was supported financially by grants Nos. 22-22-00767 and 19-79-10240, respectively, from the Russian Science Foundation, and calculation and design work on the active transmission line was performed as part of program “Prioritet-2030”(agreement No. 075-02-2021-1316).
Received: 18.10.2022
Revised: 31.10.2022
Accepted: 09.11.2022
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Sobolev, A. Yu. Pavlov, M. V. Maytama, I. A. Glinskiy, D. S. Ponomarev, K. E. Spirin, B. A. Zhmud, R. A. Khabibullin, “Active coplanar transmission line based on double-barrier GaAs/AlAs resonant tunneling diodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:2 (2023), 14–16
Citation in format AMSBIB
\Bibitem{SobPavMay23}
\by A.~S.~Sobolev, A.~Yu.~Pavlov, M.~V.~Maytama, I.~A.~Glinskiy, D.~S.~Ponomarev, K.~E.~Spirin, B.~A.~Zhmud, R.~A.~Khabibullin
\paper Active coplanar transmission line based on double-barrier GaAs/AlAs resonant tunneling diodes
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2023
\vol 49
\issue 2
\pages 14--16
\mathnet{http://mi.mathnet.ru/pjtf6893}
\crossref{https://doi.org/10.21883/PJTF.2023.02.54279.19395}
\elib{https://elibrary.ru/item.asp?id=50252986}
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