Forming regimes of Pd/Ge/Au contact system to $n$-GaAs influence on its electric parameters

The investigations of Pd/Ge/Au contact system forming regimes influence on the specific contact resistivity to $n$-type conductivity GaAs layer were carried out. The method of samples surface treatment before the layers evaporation and thermal annealing regimes in H$_2$, N$_2$ and Ar atmosphere influence on contact system parameters was investigated. The specific contact resistivity value $(2-3)\cdot10^{-6}\Omega$ $\cdot$ cm$^2$ at the reduced annealing temperature 190$^\circ$C was archived.