Pisma v Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Pisma v Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Pisma v Zhurnal Tekhnicheskoi Fiziki, 2023, Volume 49, Issue 6, Pages 16–20
DOI: https://doi.org/10.21883/PJTF.2023.06.54810.19404 (Mi pjtf6938) 		 
Study of InP/GaP quantum wells grown by vapor phase epitaxy

A. I. Baranovab, A. V. Uvarovab, A. A. Maksimovaab, E. A. Vyacheslavovaab, N. A. Kalyuzhnyyc, S. A. Mintairovc, R. A. Saliic, G. E. Yakovlevb, V. I. Zubkovb, A. S. Gudovskikhab

a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
b Saint Petersburg Electrotechnical University "LETI", St. Petersburg, Russia
c Ioffe Institute, St. Petersburg, Russia
Full-text PDF (268 kB)
DOI: https://doi.org/10.21883/PJTF.2023.06.54810.19404
Abstract: We consider structure with single quantum well InP 5 nm thick grown by vapor phase epitaxy on $n$-GaP wafer. By classical capacitance-voltage profiling of Schottky diode on sample and electrochemical profiling, electron accumulation were detected in InP layer so existence of quantum well is confirmed. Results of admittance spectroscopy and deep-level transient spectroscopy showed defect formation in GaP layers above InP with energy position of Ec-0.21 eV, 0.30 eV and 0.93 eV.
Keywords: quantum well, capacitance-voltage profiling, electrochemical profiling.
Funding agency Grant number
Ministry of Science and Higher Education of the Russian Federation FSRM-2020-0004
This study was carried out under state assignment of the Ministry of Science and Higher Education of the Russian Federation (project No. FSRM-2020-0004).
Received: 25.10.2022
Revised: 10.01.2023
Accepted: 10.01.2023
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Baranov, A. V. Uvarov, A. A. Maksimova, E. A. Vyacheslavova, N. A. Kalyuzhnyy, S. A. Mintairov, R. A. Salii, G. E. Yakovlev, V. I. Zubkov, A. S. Gudovskikh, “Study of InP/GaP quantum wells grown by vapor phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:6 (2023), 16–20
Citation in format AMSBIB
\Bibitem{BarUvaMak23}
\by A.~I.~Baranov, A.~V.~Uvarov, A.~A.~Maksimova, E.~A.~Vyacheslavova, N.~A.~Kalyuzhnyy, S.~A.~Mintairov, R.~A.~Salii, G.~E.~Yakovlev, V.~I.~Zubkov, A.~S.~Gudovskikh
\paper Study of InP/GaP quantum wells grown by vapor phase epitaxy
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2023
\vol 49
\issue 6
\pages 16--20
\mathnet{http://mi.mathnet.ru/pjtf6938}
\crossref{https://doi.org/10.21883/PJTF.2023.06.54810.19404}
\elib{https://elibrary.ru/item.asp?id=50409149}
Linking options:
  • https://www.mathnet.ru/eng/pjtf6938
  • https://www.mathnet.ru/eng/pjtf/v49/i6/p16
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025