High-efficiency GaInP/GaAs photoconverters of the 600 nm laser line

Optimized photoconverters for operation under high-power laser radiation in the green-red spectral range based on MOCVD-grown GaInP/GaAs heterostructures are fabricated. The Au(Ge)/Ni/Au and Pd/Ge/Au contact systems have been studied to form the front contact grid of devices. As a result, the laser photoconverter with a Pd/Ge/Au contact showed an efficiency of more than 50% up to an incident radiation power density of 30 W/cm$^2$ with a maximum value of 54.4% under 7 W/cm$^2$ for laser line with wavelength of 600 nm.