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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2023, Volume 49, Issue 8, Pages 39–41
DOI: https://doi.org/10.21883/PJTF.2023.08.55137.19512 (Mi pjtf6967) 		 
Limiting factors for the growth rate of epitaxial III–V compound semiconductors

V. G. Dubrovskii

Saint Petersburg State University, St. Petersburg, Russia
Full-text PDF (203 kB)
DOI: https://doi.org/10.21883/PJTF.2023.08.55137.19512
Abstract: Limiting factors for the growth rate of epitaxial III–V compound semiconductors are investigated. A model based on the two connected diffusion equations for the group III and V adatoms applies for planar layers and different nanostructures including III–V nanowires. An expression for the step growth rate is obtained and a physical parameter is revealed which determines an element which actually limits the growth process.
Keywords: III–V compound semiconductors, surface diffusion of adatoms, desorption, step growth rate.
Funding agency Grant number
Saint Petersburg State University 93020138
This study was supported by a research grant from the St. Petersburg State University (ID 93020138).
Received: 25.01.2023
Revised: 21.02.2023
Accepted: 21.02.2023
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. G. Dubrovskii, “Limiting factors for the growth rate of epitaxial III–V compound semiconductors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:8 (2023), 39–41
Citation in format AMSBIB
\Bibitem{Dub23}
\by V.~G.~Dubrovskii
\paper Limiting factors for the growth rate of epitaxial III--V compound semiconductors
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2023
\vol 49
\issue 8
\pages 39--41
\mathnet{http://mi.mathnet.ru/pjtf6967}
\crossref{https://doi.org/10.21883/PJTF.2023.08.55137.19512}
\elib{https://elibrary.ru/item.asp?id=50407458}
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