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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2023, Volume 49, Issue 16, Pages 29–32
DOI: https://doi.org/10.21883/PJTF.2023.16.55965.19602 (Mi pjtf7052) 		 
Low-voltage InP heterostyristors for 50–150 ns current pulses generation

S. O. Slipchenkoa, A. A. Podoskina, P. S. Gavrinaa, Yu. K. Kirichenkoa, N. V. Shuvalovaa, N. A. Rudovaa, V. A. Kapitonova, A. Yu. Leshkoa, I. V. Shushkanova, V. V. Zolotareva, V. A. Kryuchkova, N. A. Pikhtina, T. A. Bagaeva, I. V. Yarotskayaa, V. N. Svetogorovb, Yu. L. Ryaboshtanb, M. A. Laduginb, A. A. Marmalyukb, V. A. Simakovb

a Ioffe Institute, St. Petersburg, Russia
b Polyus Research and Development Institute named after M. F. Stel'makh, Moscow, Russia
Full-text PDF (132 kB)
DOI: https://doi.org/10.21883/PJTF.2023.16.55965.19602
Abstract: Current switches based on low-voltage InP heterothyristors with a maximum blocking voltage of 20 V were developed and studied. In current pulse generation mode, the efficient operation of InP heterothyristors with a low-resistance load in the form of a capacitor was demonstrated. It has been shown that the minimum turn-on delay time is about 6 ns at a control current amplitude of 60 mA. The possibility of generating current pulses with a duration of 53–154 ns and amplitudes of 38–130 A was demonstrated when the capacitor values were changed in the range of 56–1000 nF.
Keywords: thyristor, heterothyristor, current switch.
Funding agency Grant number
Russian Science Foundation 22-79-10159
The authors wish to thank the Russian Science Foundation for financial support of their research (project No. 22-79-10159).
Received: 19.04.2023
Revised: 08.06.2023
Accepted: 12.06.2023
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. O. Slipchenko, A. A. Podoskin, P. S. Gavrina, Yu. K. Kirichenko, N. V. Shuvalova, N. A. Rudova, V. A. Kapitonov, A. Yu. Leshko, I. V. Shushkanov, V. V. Zolotarev, V. A. Kryuchkov, N. A. Pikhtin, T. A. Bagaev, I. V. Yarotskaya, V. N. Svetogorov, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, “Low-voltage InP heterostyristors for 50–150 ns current pulses generation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:16 (2023), 29–32
Citation in format AMSBIB
\Bibitem{SliPodGav23}
\by S.~O.~Slipchenko, A.~A.~Podoskin, P.~S.~Gavrina, Yu.~K.~Kirichenko, N.~V.~Shuvalova, N.~A.~Rudova, V.~A.~Kapitonov, A.~Yu.~Leshko, I.~V.~Shushkanov, V.~V.~Zolotarev, V.~A.~Kryuchkov, N.~A.~Pikhtin, T.~A.~Bagaev, I.~V.~Yarotskaya, V.~N.~Svetogorov, Yu.~L.~Ryaboshtan, M.~A.~Ladugin, A.~A.~Marmalyuk, V.~A.~Simakov
\paper Low-voltage InP heterostyristors for 50--150 ns current pulses generation
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2023
\vol 49
\issue 16
\pages 29--32
\mathnet{http://mi.mathnet.ru/pjtf7052}
\crossref{https://doi.org/10.21883/PJTF.2023.16.55965.19602}
\elib{https://elibrary.ru/item.asp?id=54185937}
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