G. S. Gagis, V. I. Kuchinskii, R. Yu. Kozlov, D. Yu. Kazantsev, B. Ya. Ber, M. V. Tokarev, A. S. Vlasov, V. I. Vasil'ev, “Solid-phase substitution processes with phosphorus in InAs and InSb”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:20 (2023), 20

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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2023, Volume 49, Issue 20, Pages 20–22
DOI: https://doi.org/10.61011/PJTF.2023.20.56341.19683 (Mi pjtf7093)

Solid-phase substitution processes with phosphorus in InAs and InSb

G. S. Gagis^a, V. I. Kuchinskii^a, R. Yu. Kozlov^bc, D. Yu. Kazantsev^a, B. Ya. Ber^a, M. V. Tokarev^a, A. S. Vlasov^a, V. I. Vasil’ev^a

^a Ioffe Institute, St. Petersburg, Russia
^b National University of Science and Technology «MISIS», Moscow, Russia
^c Federal State Research and Design Institute of Rare Metal Industry, Moscow, Russia

Full-text PDF (170 kB)

DOI: https://doi.org/10.61011/PJTF.2023.20.56341.19683

Abstract: The processes of solid-phase substitution of atoms of the fifth group for phosphorus atoms in InAs semiconductor wafers at temperatures of 580–590$^\circ$C and in InSb at 440–460$^\circ$C using solutions of the Sn–ZnGeP$_2$ and Sn–CdGeP$_2$ melts as vapor sources have been studied. The formation of InP$_x$Sb$_{1-x}$ solid solution in InSb was confirmed by the Raman light scattering method.

Keywords: solid-phase substitution reactions, $p$–$n$-junction, doping, narrow-bandgap semiconductors.

Received: 11.07.2023
Revised: 29.08.2023
Accepted: 29.08.2023

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: G. S. Gagis, V. I. Kuchinskii, R. Yu. Kozlov, D. Yu. Kazantsev, B. Ya. Ber, M. V. Tokarev, A. S. Vlasov, V. I. Vasil'ev, “Solid-phase substitution processes with phosphorus in InAs and InSb”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:20 (2023), 20–22

Citation in format AMSBIB

\Bibitem{GagKucKoz23}

\by G.~S.~Gagis, V.~I.~Kuchinskii, R.~Yu.~Kozlov, D.~Yu.~Kazantsev, B.~Ya.~Ber, M.~V.~Tokarev, A.~S.~Vlasov, V.~I.~Vasil'ev

\paper Solid-phase substitution processes with phosphorus in InAs and InSb

\jour Pisma v Zhurnal Tekhnicheskoi Fiziki

\yr 2023

\vol 49

\issue 20

\pages 20--22

\mathnet{http://mi.mathnet.ru/pjtf7093}

\crossref{https://doi.org/10.61011/PJTF.2023.20.56341.19683}

\elib{https://elibrary.ru/item.asp?id=54764300}

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