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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2025, Volume 51, Issue 1, Pages 33–36
DOI: https://doi.org/10.61011/PJTF.2025.01.59518.20018 (Mi pjtf7169) 		 
Features of SnO$_2$/Ga$_2$O$_3$/GaN/Al$_2$O$_3$ multilayer film domain structure

M. E. Boikoa, M. D. Sharkova, A. M. Boikoa, P. N. Butenkoa, A. V. Almaevb, V. I. Nikolaeva

a Ioffe Institute, St. Petersburg, Russia
b Tomsk State University, Tomsk, Russia
Full-text PDF (258 kB)
DOI: https://doi.org/10.61011/PJTF.2025.01.59518.20018
Abstract: In a film SnO$_2$/Ga$_2$O$_3$/GaN/Al$_2$O$_3$ grown via vapor-phase epitaxial techniques a study of domains formation has been performed with the help of X-ray diffraction. The estimations of domain sizes in the film normal direction within film layers and the substrate have been obtained. Reduction of crystal perfectness in layers along their remoteness from the substrate has been stated. The hypothesis of amorphous or nanosized structure of the upside tin dioxide layer has been formulated.
Keywords: semiconductor heterostructures, multilayer films, X-ray diffraction, domain structure, crystal perfectness.
Received: 21.06.2024
Revised: 20.08.2024
Accepted: 21.08.2024
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. E. Boiko, M. D. Sharkov, A. M. Boiko, P. N. Butenko, A. V. Almaev, V. I. Nikolaev, “Features of SnO$_2$/Ga$_2$O$_3$/GaN/Al$_2$O$_3$ multilayer film domain structure”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:1 (2025), 33–36
Citation in format AMSBIB
\Bibitem{BoiShaBoi25}
\by M.~E.~Boiko, M.~D.~Sharkov, A.~M.~Boiko, P.~N.~Butenko, A.~V.~Almaev, V.~I.~Nikolaev
\paper Features of SnO$_2$/Ga$_2$O$_3$/GaN/Al$_2$O$_3$ multilayer film domain structure
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2025
\vol 51
\issue 1
\pages 33--36
\mathnet{http://mi.mathnet.ru/pjtf7169}
\elib{https://elibrary.ru/item.asp?id=80358732}
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