Determination of thickness and doping features of multilayer $4H$–$\mathrm{SiC}$ structures by frequency analysis of IR reflection spectra

A technique has been developed for frequency analysis of the IR reflection spectrum to determine the thickness and order of the layers in the epitaxial structure of silicon carbide. Calculations for the $4H$–$\mathrm{SiC}$ epitaxial structure have been performed. The method has been shown to be highly sensitive to optical boundaries resulting from a sequential increase in the doping level during the layer growth.