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This article is cited in 1 scientific paper (total in 1 paper)
Investigation of the effect of hydrogen content on the conductivity of nanocrystalline diamond films
O. A. Ivanova, A. L. Vikhareva, S. A. Bogdanova, N. M. Ovechkina, V. P. Loginovb, Yu. A. Yakovlevb, A. Ya. Vul'c a Federal Research Center A.V. Gaponov-Grekhov Institute of Applied Physics of the Russian Academy of Sciences, Nizhny Novgorod, Russia
b Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg, Russia
c Ioffe Institute, St. Petersburg, Russia
Abstract:
The results are presented for investigation of electrical conductivity of nanocrystalline diamond (NCD) films with thickness of 0.5–0.6 microns grown on silicon Si(100) substrates by the CVD method using methane-hydrogen and methane-hydrogen-oxygen mixtures. By the method of heating in vacuum with using hydrogen analyzer AB-1, the concentration of hydrogen in the studied films was determined and the relationship between the content of hydrogen in the NCD film and its conductivity was estimated. It has been shown that high-temperature processing in vacuum at the temperature of 600$^\circ$C leads to desorption of hydrogen from the films and to a significant increase in their resistance.
Keywords:
nanocrystalline diamond, thin diamond films, electrical properties of films, hydrogen content.
Received: 16.06.2021 Revised: 11.10.2021 Accepted: 11.10.2021
Citation:
O. A. Ivanov, A. L. Vikharev, S. A. Bogdanov, N. M. Ovechkin, V. P. Loginov, Yu. A. Yakovlev, A. Ya. Vul', “Investigation of the effect of hydrogen content on the conductivity of nanocrystalline diamond films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:2 (2022), 37–40
Linking options:
https://www.mathnet.ru/eng/pjtf7213 https://www.mathnet.ru/eng/pjtf/v48/i2/p37
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