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In memoriam of E.M. Kruglov and V.V. Filimonov Quantum yield of an avalanche silicon photodiode in the 114–170 and 210–1100 nm wavelength ranges
P. N. Aruev, V. P. Belik, A. A. Blokhin, V. V. Zabrodskii, A. V. Nikolaev, V. I. Sakharov, I. T. Serenkov, V. V. Filimonov, E. V. Sherstnev Ioffe Institute, St. Petersburg, Russia
Abstract:
An avalanche silicon photodiode has been developed for the near IR, visible, UV and VUV light ranges. The external quantum efficiency has been studied in the 114–170 and 210–1100 nm ranges. It has been demonstrated that the avalanche photodiode reaches the quantum yield of 29 to 9300 electrons/photon at the 160 nm wavelength and bias voltage of 190–303 V, respectively.
Keywords:
avalanche photodiode, vacuum ultraviolet, visible light range, near IR, silicon.
Received: 17.09.2021 Revised: 19.11.2021 Accepted: 29.11.2021
Citation:
P. N. Aruev, V. P. Belik, A. A. Blokhin, V. V. Zabrodskii, A. V. Nikolaev, V. I. Sakharov, I. T. Serenkov, V. V. Filimonov, E. V. Sherstnev, “In memoriam of E.M. Kruglov and V.V. Filimonov Quantum yield of an avalanche silicon photodiode in the 114–170 and 210–1100 nm wavelength ranges”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:5 (2022), 3–6
Linking options:
https://www.mathnet.ru/eng/pjtf7245 https://www.mathnet.ru/eng/pjtf/v48/i5/p3
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