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This article is cited in 1 scientific paper (total in 1 paper)
Double negative media based on antiferromagnetic semiconductors for the terahertz frequency range
S. V. Grishina, A. V. Bogomolovaa, S. A. Nikitovb a Saratov State University, Saratov, Russia
b Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Moscow, Russia
Abstract:
The paper presents the results of a theoretical study of the dispersion characteristics of electromagnetic waves (EMW) existing in a transversely magnetized antiferromagnetic (AFM) semiconductor with loss. An AFM semiconductor is an infinite bi-gyrotropic medium, the effective material parameters of which are twice negative in several frequency ranges. It was found that these frequency bands are in the terahertz range, and there are four backward EMEs in them, two of which are TE waves, and the other two are TM waves.
Keywords:
left-handed media, antiferromagnets, semiconductors, spin waves.
Received: 09.07.2021 Revised: 16.12.2021 Accepted: 16.12.2021
Citation:
S. V. Grishin, A. V. Bogomolova, S. A. Nikitov, “Double negative media based on antiferromagnetic semiconductors for the terahertz frequency range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:5 (2022), 39–42
Linking options:
https://www.mathnet.ru/eng/pjtf7255 https://www.mathnet.ru/eng/pjtf/v48/i5/p39
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