The electrons drift velocity overshot in inverted transistor heterostructures with donor-acceptor doping and additional digital potential barriers

The first results of the electrons drift velocity study in inverted AlGaAs/InGaAs/GaAs pseudomorphic heterostructures with donor-acceptor doping and short-period AlAs/GaAs superlattices are presented. It is theoretically shown that the introduction of superlattices significantly, up to one and a half times, increases the electrons drift velocity overshot when they enter the region of a strong field. Localized states in the superlattice between the quantum well and the substrate have been found. It is shown that this effect leads to an additional increase in the electrons drift velocity overshot up to the theoretical limit for the model used, i. e., a drift velocity overshot in the bulk material of the quantum well.