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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2022, Volume 48, Issue 13, Pages 37–41
DOI: https://doi.org/10.21883/PJTF.2022.13.52743.19205 (Mi pjtf7348) 		 
InGaAlAs/InAlAs heterostructures for electro-absorption modulator

D. V. Gulyaev, D. A. Kolosovsky, D. V. Dmitriev, A. K. Gutakovskii, E. A. Kolosovskii, K. S. Zhuravlev

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
Full-text PDF (1058 kB)
DOI: https://doi.org/10.21883/PJTF.2022.13.52743.19205
Abstract: The structural and optical characteristics of heterostructures with InGaAlAs/InAlAs quantum wells, in which a quaternary alloy is obtained by alternating monolayer growth of InAlAs and InGaAs layers by molecular beam epitaxy, have been investigated. It has been shown that obtained heterostructures are promising for creation of electro-absorption modulators designed for a wavelength of 1.55 $\mu$m with the extinction coefficient of more than 20 dB at a voltage of less than 4 V.
Keywords: electro-absorption modulator, molecular beam epitaxy, quantum wells, Stark effect.
Received: 29.03.2022
Revised: 05.05.2022
Accepted: 17.05.2022
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. V. Gulyaev, D. A. Kolosovsky, D. V. Dmitriev, A. K. Gutakovskii, E. A. Kolosovskii, K. S. Zhuravlev, “InGaAlAs/InAlAs heterostructures for electro-absorption modulator”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:13 (2022), 37–41
Citation in format AMSBIB
\Bibitem{GulKolDmi22}
\by D.~V.~Gulyaev, D.~A.~Kolosovsky, D.~V.~Dmitriev, A.~K.~Gutakovskii, E.~A.~Kolosovskii, K.~S.~Zhuravlev
\paper InGaAlAs/InAlAs heterostructures for electro-absorption modulator
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2022
\vol 48
\issue 13
\pages 37--41
\mathnet{http://mi.mathnet.ru/pjtf7348}
\crossref{https://doi.org/10.21883/PJTF.2022.13.52743.19205}
\elib{https://elibrary.ru/item.asp?id=48704099}
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