Investigation of metal–insulator–semiconductor structure based on CdHgTe and HfO$_2$

The interface between Cd$_{0.22}$Hg$_{0.78}$Te and HfO$_2$ grown by plasma-enhanced atomic layer deposition at a temperature of 120$^\circ$C in a specifically optimized deposition mode has been studied. The method used in this work for measuring the admittance of metal–dielectric–semiconductor structures made it possible to establish that their electrophysical parameters are uniform over the sample surface. The spectrum of fast surface states density at the HfO$_2$–Cd$_{0.22}$Hg$_{0.78}$Te interface has been calculated.