Electrical conductive and photoelectrical properties of heterostructures based on gallium and chromium oxides with corundum structure

$\alpha$-Ga$_2$O$_3$/$\alpha$-Cr$_2$O$_3$ heterostructures with a corundum structure were obtained by chloride vapor phase epitaxy and magnetron sputtering. The structural, electrical conductive and photoelectrical properties of the obtained samples were studied. It was established that the $\alpha$-Ga$_2$O$_3$/$\alpha$-Cr$_2$O$_3$ heterostructures exhibits weak rectifying properties and in comparison with $\alpha$-Ga$_2$O$_3$ films has a higher response speed when exposed to ultraviolet radiation.