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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2025, Volume 51, Issue 5, Pages 7–10
DOI: https://doi.org/10.61011/PJTF.2025.05.59895.20094
(Mi pjtf7502)
 

Optimization of electrochemical etching parameters improves the quality factor of porous silicon microcavities

E. A. Granisoa, I. S. Kryukovaab, I. R. Nabievab, P. S. Samokhvalovab

a Laboratory of Nano-bioengineering, National Engineering Physics Institute "MEPhI"
b LIFT Center LLC, Moscow, Skolkovo
DOI: https://doi.org/10.61011/PJTF.2025.05.59895.20094
Abstract: Porous silicon is a promising and versatile material for modern technologies with a wide range of potential applications. Here we demonstrate a two-fold increase in the quality factor of porous silicon microcavities by gradient change of electrochemical etching times for each layer of microcavity, which compensates for the gradual decrease in the etching rate during sample fabrication. The results of this work will improve the performance of nanophotonic devices based on porous silicon for applications in optical communications and sensors for diagnostics and environmental monitoring.
Keywords: porous silicon, porosity, etching rate, electrochemical etching, quality factor.
Funding agency Grant number
Russian Science Foundation 21-79-30048
Received: 27.08.2024
Revised: 29.10.2024
Accepted: 30.10.2024
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. A. Graniso, I. S. Kryukova, I. R. Nabiev, P. S. Samokhvalov, “Optimization of electrochemical etching parameters improves the quality factor of porous silicon microcavities”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:5 (2025), 7–10
Citation in format AMSBIB
\Bibitem{GraKryNab25}
\by E.~A.~Graniso, I.~S.~Kryukova, I.~R.~Nabiev, P.~S.~Samokhvalov
\paper Optimization of electrochemical etching parameters improves the quality factor of porous silicon microcavities
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2025
\vol 51
\issue 5
\pages 7--10
\mathnet{http://mi.mathnet.ru/pjtf7502}
\elib{https://elibrary.ru/item.asp?id=80597211}
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