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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2025, Volume 51, Issue 5, Pages 7–10 DOI: https://doi.org/10.61011/PJTF.2025.05.59895.20094
(Mi pjtf7502)
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Optimization of electrochemical etching parameters improves the quality factor of porous silicon microcavities
E. A. Granisoa, I. S. Kryukovaab, I. R. Nabievab, P. S. Samokhvalovab a Laboratory of Nano-bioengineering, National Engineering Physics Institute "MEPhI"
b LIFT Center LLC, Moscow, Skolkovo
DOI:
https://doi.org/10.61011/PJTF.2025.05.59895.20094
Abstract:
Porous silicon is a promising and versatile material for modern technologies with a wide range of potential applications. Here we demonstrate a two-fold increase in the quality factor of porous silicon microcavities by gradient change of electrochemical etching times for each layer of microcavity, which compensates for the gradual decrease in the etching rate during sample fabrication. The results of this work will improve the performance of nanophotonic devices based on porous silicon for applications in optical communications and sensors for diagnostics and environmental monitoring.
Keywords:
porous silicon, porosity, etching rate, electrochemical etching, quality factor.
Received: 27.08.2024 Revised: 29.10.2024 Accepted: 30.10.2024
Citation:
E. A. Graniso, I. S. Kryukova, I. R. Nabiev, P. S. Samokhvalov, “Optimization of electrochemical etching parameters improves the quality factor of porous silicon microcavities”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:5 (2025), 7–10
Linking options:
https://www.mathnet.ru/eng/pjtf7502 https://www.mathnet.ru/eng/pjtf/v51/i5/p7
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| Statistics & downloads: |
| Abstract page: | 94 | | Full-text PDF : | 44 |
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