Effect of laser processing rate on silicon crystallization in a two-layer aluminum/silicon structure on a flexible polyimide substrate

The effect of the processing rate of a two-layer thin-film aluminum/silicon structure on a flexible polyimide substrate by infrared pulsed laser radiation on its composition, crystal structure, and surface morphology has been studied. For this purpose, several lines with laser movement speeds of 100–300mm/s were formed. The samples were studied by Raman scattering, energy-dispersive X-ray analysis, and atomic-force microscopy. A comprehensive study of the treated areas made it possible to identify up to seven regions differing in the structure of the silicon layer. During the study, it was found that some areas are completely crystallized or contain a mixture of crystalline and amorphous phases.