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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 1, Pages 43–49
(Mi pjtf7592)
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This article is cited in 1 scientific paper (total in 1 paper)
Formation of cellular structure in SiGe layers under nanosecond laser irradiation
E. I. Gatskevicha, G. D. Ivlevb, V. L. Malevichcd a Belarusian National Technical University
b Belarusian State University, Minsk
c B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk
d St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Abstract:
Heating, melting, and crystallization processes of SiGe solid solution on a silicon substrate occurring under the influence of nanosecond laser irradiation were numerically simulated. Formation of cellular structures during solidification of the binary melt due to a segregation element separation was analyzed. Calculation results were compared with known experimental data characterizing the duration of laser-induced phase transformations and average sizes of the cells (which are formed due to the effect of concentration supercooling) as a function of the power density in the laser pulse.
Received: 01.09.2014
Citation:
E. I. Gatskevich, G. D. Ivlev, V. L. Malevich, “Formation of cellular structure in SiGe layers under nanosecond laser irradiation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:1 (2015), 43–49; Tech. Phys. Lett., 41:1 (2015), 21–24
Linking options:
https://www.mathnet.ru/eng/pjtf7592 https://www.mathnet.ru/eng/pjtf/v41/i1/p43
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