Thin single-crystal Ge layers on 2" Si substrates

Conditions for preparing thin homogeneous mirror-smooth Ge layers on 2" Si substrates by hot wire chemical vapor-phase deposition have been determined. Ge layers 200 nm thick have a structure of epitaxial mosaic single crystal with almost completely relaxed elastic stresses. The X-ray diffraction rocking curve half-width is less than 6'. The density of grown-in dislocations in Ge layers is in the range of (3–6) $\cdot$ 10$^5$ cm$^{-2}$, and the rms surface roughness does not exceed 0.8 nm.