Etching of carbon nanowalls during synthesis in the plasma of direct current discharge

Anisotropic etching of carbon nanowalls by hydrogen during synthesis in plasma discharge of direct current is considered. This effect brings about generation of defects in the bottom part of the side surface of the nanowalls during their vertical growth. Based on the theoretical model of the discharge, it is shown that a decrease in the intensity of such etching is accompanied by an increase in the concentrations of such hydrocarbon radicals as C, CH, CH$_2$, C$_2$H, C$_3$, and C$_3$H, which indicates their possible role in the so-called process of healing of vacancies in the structure of nanowalls. In addition, it has been shown that an increase in synthesis temperature also can contribute to a decrease in the etching intensity.