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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 3, Pages 103–110 (Mi pjtf7628)  
Dynamics of induced base layer formation in tunnel MIS-transistors under strong electric fields

S. V. Belov, E. V. Ostroumova, E. A. Rogacheva

Ioffe Institute, St. Petersburg
Full-text PDF (132 kB)
Abstract: Dynamic processes establishing of the collector current and also the rate of inversion base forming for tunnel MIS-structure transistors were investigated in Al–SiO$_2$–$n$-Si heterostructures having a tunnelthin insulator layer and an advanced emitter window.
Received: 07.10.2014
English version:
Technical Physics Letters, 2015, Volume 41, Issue 2, Pages 153–156
DOI: https://doi.org/10.1134/S1063785015020030
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. V. Belov, E. V. Ostroumova, E. A. Rogacheva, “Dynamics of induced base layer formation in tunnel MIS-transistors under strong electric fields”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:3 (2015), 103–110; Tech. Phys. Lett., 41:2 (2015), 153–156
Citation in format AMSBIB
\Bibitem{BelOstRog15}
\by S.~V.~Belov, E.~V.~Ostroumova, E.~A.~Rogacheva
\paper Dynamics of induced base layer formation in tunnel MIS-transistors under strong electric fields
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2015
\vol 41
\issue 3
\pages 103--110
\mathnet{http://mi.mathnet.ru/pjtf7628}
\elib{https://elibrary.ru/item.asp?id=24196325}
\transl
\jour Tech. Phys. Lett.
\yr 2015
\vol 41
\issue 2
\pages 153--156
\crossref{https://doi.org/10.1134/S1063785015020030}
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