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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 6, Pages 105–110 (Mi pjtf7670)  
Optical characteristics of laser diodes based on A3B5 compounds grown on germanium substrates

V. Ya. Aleshkinab, N. V. Dikarevac, A. A. Dubinovab, B. N. Zvonkovc, Z. F. Krasil'nikab, S. M. Nekorkinc

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Full-text PDF (104 kB)
Abstract: A comparative study of the electrical and optical characteristics of laser diodes based on GaAs and In$_{0.01}$Ga$_{0.99}$As structures with quantum wells grown on Ge substrates has been performed. It is established that lasers based on In$_{0.01}$Ga$_{0.99}$As structure are more perfect and exhibit characteristics comparable with those of lasers based on GaAs.
English version:
Technical Physics Letters, 2015, Volume 41, Issue 3, Pages 304–306
DOI: https://doi.org/10.1134/S1063785015030177
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, B. N. Zvonkov, Z. F. Krasil'nik, S. M. Nekorkin, “Optical characteristics of laser diodes based on A3B5 compounds grown on germanium substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:6 (2015), 105–110; Tech. Phys. Lett., 41:3 (2015), 304–306
Citation in format AMSBIB
\Bibitem{AleDikDub15}
\by V.~Ya.~Aleshkin, N.~V.~Dikareva, A.~A.~Dubinov, B.~N.~Zvonkov, Z.~F.~Krasil'nik, S.~M.~Nekorkin
\paper Optical characteristics of laser diodes based on A3B5 compounds grown on germanium substrates
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2015
\vol 41
\issue 6
\pages 105--110
\mathnet{http://mi.mathnet.ru/pjtf7670}
\elib{https://elibrary.ru/item.asp?id=24196368}
\transl
\jour Tech. Phys. Lett.
\yr 2015
\vol 41
\issue 3
\pages 304--306
\crossref{https://doi.org/10.1134/S1063785015030177}
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