An efficient method for reducing the threshold of controlled triggering of fast reversely switched dinistors

A new method for triggering reversely switched dinistors (RSDs) into submicrosecond regimes with high current rise rates $dJ/dt$ is proposed. The method consists in matching the parameters of RSDs and circuit elements in such a way that the initial charge introduced by the reverse pumping pulse is increased by many times even before the current through the load starts to increase sharply. This allows one to eliminate extremely dangerous delays at the switching-on front in the current range of about 500 A/cm$^2$. The efficiency of this method is confirmed by the results of a simulation computer experiment. For example, the calculations for RSDs with a blocking voltage of 5 kV reveal the possibility of increasing the $dJ/dt$ parameter to 3 $\cdot$ 10$^{10}$ A $\cdot$ cm$^{-2}$ $\cdot$ s$^{-1}$ (this value is tens of times higher than the corresponding one for microsecond switches based on RSDs) at an initial switching-on charge of just 1.25 $\mu$C/cm$^2$.