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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 8, Page 409 (Mi pjtf7700)  
Erratum to: “Dynamics of induced base layer formation in tunnel MIS-transistors under strong electric fields”

S. V. Belov, E. V. Ostroumova, E. A. Rogacheva

Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia
Full-text PDF (77 kB)
English version:
Technical Physics Letters, 2015, Volume 41, Issue 4, Pages 409
DOI: https://doi.org/10.1134/S106378501504032X
Document Type: Letter, errata
Language: English
Citation: S. V. Belov, E. V. Ostroumova, E. A. Rogacheva, “Erratum to: “Dynamics of induced base layer formation in tunnel MIS-transistors under strong electric fields””, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:8 (2015), 409; Tech. Phys. Lett., 41:4 (2015), 409
Citation in format AMSBIB
\Bibitem{BelOstRog15}
\by S.~V.~Belov, E.~V.~Ostroumova, E.~A.~Rogacheva
\paper Erratum to: ``Dynamics of induced base layer formation in tunnel MIS-transistors under strong electric fields''
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2015
\vol 41
\issue 8
\pages 409
\mathnet{http://mi.mathnet.ru/pjtf7700}
\transl
\jour Tech. Phys. Lett.
\yr 2015
\vol 41
\issue 4
\pages 409
\crossref{https://doi.org/10.1134/S106378501504032X}
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