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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 10, Pages 29–34
(Mi pjtf7719)
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This article is cited in 1 scientific paper (total in 1 paper)
The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga–HCl–NH$_3$–H$_2$–Ar system
Yu. V. Zhilyaev, V. V. Zelenin, T. A. Orlova, V. N. Panteleev, N. K. Poletaev, S. N. Rodin, S. A. Snytkina Ioffe Institute, St. Petersburg
Abstract:
We have studied epitaxial layers of gallium nitride (GaN) in a template composition grown by surfactant-mediated hydride-chloride vapor phase epitaxy. The surfactant component was provided by 5 mass% additives of antimony and indium to the source of gallium. Comparative analysis of the obtained results shows evidence of the positive influence of surfactants on the morphology of epitaxial GaN layers.
Received: 17.07.2014
Citation:
Yu. V. Zhilyaev, V. V. Zelenin, T. A. Orlova, V. N. Panteleev, N. K. Poletaev, S. N. Rodin, S. A. Snytkina, “The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga–HCl–NH$_3$–H$_2$–Ar system”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:10 (2015), 29–34; Tech. Phys. Lett., 41:10 (2015), 476–478
Linking options:
https://www.mathnet.ru/eng/pjtf7719 https://www.mathnet.ru/eng/pjtf/v41/i10/p29
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