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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 14, Pages 16–24
(Mi pjtf7774)
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This article is cited in 7 scientific papers (total in 7 papers)
Electroforming and bipolar resistive switching in Si–SiO$_2$–V$_2$O$_5$–Au binary oxide structure
V. V. Putrolaynen, A. A. Velichko, P. P. Boriskov, A. L. Pergament, G. B. Stefanovich, N. A. Kuldin Petrozavodsk State University
Abstract:
We have studied bipolar resistive switching (BRS) with memory in a binary oxide structure Si–SiO$_2$–V$_2$O$_5$–Au manufactured by reactive magnetron sputtering. A physical model is proposed that explains the formation of a BRS structure with a nanosized silicon channel in SiO$_2$ and reversible modulation of conductivity in thin V$_2$O$_5$ layer at the channel boundary. The radius of this silicon channel is found from calculations based on the heat equation and atomic force microscopy data.
Received: 26.02.2015
Citation:
V. V. Putrolaynen, A. A. Velichko, P. P. Boriskov, A. L. Pergament, G. B. Stefanovich, N. A. Kuldin, “Electroforming and bipolar resistive switching in Si–SiO$_2$–V$_2$O$_5$–Au binary oxide structure”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:14 (2015), 16–24; Tech. Phys. Lett., 41:7 (2015), 672–675
Linking options:
https://www.mathnet.ru/eng/pjtf7774 https://www.mathnet.ru/eng/pjtf/v41/i14/p16
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