Laser ablation of single-crystalline silicon by radiation of pulsed frequency-selective fiber laser

We have studied the process of destruction of the surface of a single-crystalline silicon wafer scanned by the beam of a pulsed ytterbium-doped fiber laser radiation with a wavelength of $\lambda$ = 1062 nm. It is established that the laser ablation can proceed without melting of silicon and the formation of a plasma plume. Under certain parameters of the process (radiation power, beam scan velocity, and beam overlap density), pronounced oxidation of silicon microparticles with the formation of a characteristic loose layer of fine powdered silicon dioxide has been observed for the first time. The range of lasing and beam scanning regimes in which the growth of SiO$_2$ layer takes place is determined.